S29AL016J55TFIR23

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Spansion Inc.
• Memory Type: NOR Flash
• Density: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 55 ns
• Package Type: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The S29AL016J55TFIR23 has a 48-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE#
18. WE#
19. OE#
20. BYTE#
21. VCC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. RY/BY#
31. RESET#
32. VSS
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in hardware and software protection mechanisms
• Low power consumption during standby mode
• Reliable operation in harsh environmental conditions

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for quick data access - Sector erase capability allows efficient data management - Reliable operation in extreme temperatures

Disadvantages: - Limited endurance compared to other non-volatile memory technologies - Higher cost per bit compared to some alternative memory solutions

Working Principles

The S29AL016J55TFIR23 is based on NOR Flash memory technology. It utilizes a grid of memory cells, where each cell stores a binary value (0 or 1) by trapping or releasing electric charge. The memory cells are organized into sectors, which can be individually erased and programmed. When data is read from or written to the memory, the appropriate voltage levels are applied to the pins to access the desired memory location.

Detailed Application Field Plans

The S29AL016J55TFIR23 is commonly used in various electronic devices that require non-volatile data storage, such as:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Networking equipment

Its high capacity, fast access times, and reliability make it suitable for applications that demand robust and long-term data storage.

Detailed and Complete Alternative Models

1. S29AL016D70TFIR20 - Similar specifications, but with a faster access time of 70 ns.
2. S29AL032D90TFIR40 - Higher density (32 Megabits) with a slower access time of 90 ns.
3. S29AL064J10TFI020 - Double the density (64 Megabits) with a faster access time of 10 ns.

These alternative models offer different combinations of capacity, speed, and cost to cater to specific application requirements.

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