S29AL016J55BFIR10A

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 16 Megabits (2 Megabytes)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 55 ns
• Organization: 2M x 8 bits
• Page Size: 256 bytes
• Erase/Program Times: 20,000 cycles minimum

Detailed Pin Configuration

The S29AL016J55BFIR10A has the following pin configuration:

1. VCC (Power Supply)
2. A0-A19 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. CE# (Chip Enable)
5. OE# (Output Enable)
6. WE# (Write Enable)
7. RP# (Ready/Busy Status)
8. RESET# (Reset Input)
9. BYTE# (Byte/Word Organization Selection)
10. WP#/ACC (Write Protect/Acceleration Mode)

Functional Features

• High-speed read and write operations enable fast data access
• Non-volatile memory retains data even when power is disconnected
• Low power consumption extends battery life in portable devices
• Large storage capacity accommodates a wide range of data requirements
• Reliable and durable design ensures data integrity

Advantages

• Fast access times enhance overall system performance
• Low power consumption reduces energy usage and extends battery life
• Large storage capacity allows for versatile data storage applications
• Durable design ensures reliable data storage and retrieval

Disadvantages

• Limited erase/program cycles may restrict certain applications
• Parallel interface may not be suitable for all system designs
• BGA package may require specialized equipment for installation or replacement

Working Principles

The S29AL016J55BFIR10A utilizes NOR Flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when power is disconnected. The parallel interface allows for high-speed data transfer between the memory and the host device. The chip enable (CE#), output enable (OE#), and write enable (WE#) pins control the read and write operations. The memory can be erased and programmed in blocks, ensuring efficient data management.

Detailed Application Field Plans

The S29AL016J55BFIR10A is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Consumer Electronics:

   • Digital cameras
   • Set-top boxes
   • Portable media players

2. Automotive Systems:

   • Infotainment systems
   • Instrument clusters
   • Advanced driver-assistance systems (ADAS)

3. Industrial Equipment:

   • Programmable logic controllers (PLCs)
   • Human-machine interfaces (HMIs)
   • Data loggers

4. Communication Devices:

   • Routers
   • Network switches
   • Wireless access points

Detailed and Complete Alternative Models

1. S29GL064N90TFI040 (Spansion)
2. M25P16-VME6TG (Micron Technology)
3. AT45DB161E-SHN2B-T (Adesto Technologies)
4. W25Q16JVSSIQ (Winbond Electronics)

These alternative models offer similar specifications and functionality to the S29AL016J55BFIR10A, providing customers with a range of options for their specific requirements.

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