S29AL008J70TFA023

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Large storage capacity
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, typically 2500 units per reel

Specifications

• Memory Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 70 ns
  • Program: 10 µs
  • Erase: 10 ms
• Operating Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29AL008J70TFA023 flash memory chip has the following pin configuration:

```

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| | | U1 | |_______________________|

Pin Configuration: 1. VCC 2. A9 3. A8 4. A11 5. A13 6. A14 7. A12 8. A7 9. A6 10. A5 11. A4 12. A3 13. A2 14. A1 15. A0 16. DQ0 17. DQ1 18. DQ2 19. DQ3 20. DQ4 21. DQ5 22. DQ6 23. DQ7 24. WE# 25. CE# 26. RE# 27. BYTE# 28. A10 29. RP# 30. NC 31. GND ```

Functional Features

• High-speed data transfer
• Easy integration into various electronic devices
• Reliable and durable storage solution
• Low power consumption for extended battery life
• Efficient programming and erasing operations

Advantages and Disadvantages

Advantages: - Fast read and write operations - Large storage capacity - Low power consumption - Long data retention period - Compact package size

Disadvantages: - Relatively slower erase time compared to newer flash memory technologies - Limited endurance compared to some other types of non-volatile memory

Working Principles

The S29AL008J70TFA023 flash memory utilizes a floating-gate transistor structure to store data. It employs a technique called "NOR flash" architecture, where each memory cell is composed of a single transistor. The data is stored by trapping electric charge within the floating gate, which alters the transistor's behavior and represents a binary value (0 or 1). This trapped charge can be erased by applying a higher voltage, allowing the cell to be reprogrammed with new data.

Detailed Application Field Plans

The S29AL008J70TFA023 flash memory chip finds applications in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the S29AL008J70TFA023 flash memory chip are: - S29GL064S90TFI020 - S29GL128S90TFIR20 - S29GL256S90TFIR23 - S29GL512S90TFIR24 - S29GL01GS90TFIR30

These alternative models offer similar functionality and characteristics, but with varying storage capacities and package options.

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