S29AL008J70BFA013

Product Overview

Category

S29AL008J70BFA013 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 8 gigabits (1 gigabyte) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable and durable: Withstands frequent read/write cycles without data loss.
• Low power consumption: Optimized for energy efficiency.
• Compact package: Designed to fit into small electronic devices.
• RoHS compliant: Free from hazardous substances.

Package

S29AL008J70BFA013 is available in a compact surface-mount package, which facilitates easy integration onto printed circuit boards (PCBs).

Essence

The essence of S29AL008J70BFA013 lies in its ability to provide high-capacity, non-volatile storage in a compact form factor, making it an essential component for modern electronic devices.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Memory Size: 8 Gb (1 GB)
• Organization: 1G x 8
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-48

Detailed Pin Configuration

The pin configuration of S29AL008J70BFA013 is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. A24
26. A25
27. A26
28. A27
29. A28
30. A29
31. A30
32. A31
33. BYTE#
34. WE#
35. CE#
36. OE#
37. RY/BY#
38. VCC
39. GND
40. DQ0
41. DQ1
42. DQ2
43. DQ3
44. DQ4
45. DQ5
46. DQ6
47. DQ7
48. RP#

Functional Features

• High-speed data transfer: Supports fast read and write operations, allowing for efficient data access.
• Sector erase capability: Enables selective erasure of specific memory sectors, enhancing flexibility in data management.
• Embedded algorithms: Includes built-in error correction and wear-leveling algorithms to ensure data integrity and prolong the lifespan of the memory device.
• Software and hardware protection features: Provides mechanisms to protect stored data from unauthorized access or accidental modification.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact form factor
• Low power consumption
• Reliable and durable

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may start to degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

S29AL008J70BFA013 utilizes NOR flash memory technology. It stores data by trapping electric charges in floating gate transistors, which can be electrically programmed and erased. When reading data, the stored charges are detected, allowing retrieval of the stored information.

Detailed Application Field Plans

S29AL008J70BFA013 finds applications in various electronic devices that require non-volatile storage, including but not limited to: - Smartphones - Tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to S29AL008J70BFA013 include: - S29GL064N90TFI040 - MT29F8G08ABACAWP - IS42S16400J-7TLI

These alternative models may have different specifications, pin configurations, or package types, so it is important