S29AL008J55TFNR20

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Large storage capacity
• Package: TFNR20 (Thin Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Typically sold in reels or trays, quantity varies based on customer requirements

Specifications

• Manufacturer: XYZ Corporation
• Memory Type: NOR Flash
• Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 55 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Page Size: 256 bytes
• Sector Size: 4 Kbytes
• Endurance: 100,000 erase/program cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29AL008J55TFNR20 has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 31 | A30 | Address Input | | 32 | A-1 | Address Input | | 33 | A-2 | Address Input | | ... | ... | ... | | 48 | A-17 | Address Input | | 49 | DQ0 | Data Input/Output | | 50 | DQ1 | Data Input/Output | | ... | ... | ... | | 65 | DQ16 | Data Input/Output | | 66 | DQ17 | Data Input/Output | | 67 | VCC | Power Supply (2.7V - 3.6V) | | 68 | GND | Ground |

Functional Features

• High-speed read and write operations for efficient data access
• Erase and program suspend/resume functionality for flexible operation
• Burst mode support for faster data transfer
• Low power consumption for extended battery life
• Reliable endurance and data retention characteristics for long-term usage

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick data retrieval and storage
• Low power consumption helps in conserving energy
• Erase and program suspend/resume features provide flexibility during operations
• Reliable endurance and data retention ensure data integrity over time

Disadvantages

• Limited to 8 Megabits (1 Megabyte) capacity, may not be suitable for applications requiring larger storage
• Higher cost compared to other lower-capacity flash memory options
• Requires proper handling and storage conditions to maintain data integrity

Working Principles

The S29AL008J55TFNR20 is based on NOR Flash memory technology. It utilizes a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors and pages, allowing for efficient read, write, and erase operations. When data is written, the memory cells are programmed by applying appropriate voltage levels. Similarly, erasing is achieved by applying specific voltage patterns. The stored data can be accessed by providing the corresponding address and reading the data from the memory cells.

Detailed Application Field Plans

The S29AL008J55TFNR20 is commonly used in various electronic devices that require non-volatile data storage. Some of the application fields include: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

• S29AL016J55TFNR20: 16 Megabit (2 Megabyte) capacity variant
• S29AL032J55TFNR20: 32 Megabit (4 Megabyte) capacity variant
• S29AL064J55TFNR20: 64 Megabit (8 Megabyte) capacity variant
• S29AL128J55TFNR20: 128 Megabit (16 Megabyte) capacity variant

(Note: The above alternative models are examples and not an exhaustive list)

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