S25FL512SAGBHVC13

Product Overview

Category

The S25FL512SAGBHVC13 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile memory: The S25FL512SAGBHVC13 retains data even when power is removed.
• High capacity: With a storage capacity of 512 megabits (64 megabytes), it offers ample space for storing large amounts of data.
• Fast read and write speeds: This flash memory device provides high-speed data transfer, enabling quick access to stored information.
• Low power consumption: The S25FL512SAGBHVC13 is designed to minimize energy usage, making it suitable for battery-powered devices.
• Durable and reliable: It has a robust design that ensures data integrity and longevity.

Package and Quantity

The S25FL512SAGBHVC13 is available in a compact surface-mount package. Each package contains one unit of the flash memory device.

Specifications

• Memory Type: NOR Flash
• Memory Size: 512 Mbit (64 MB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S25FL512SAGBHVC13 has a total of 8 pins, which are assigned specific functions:

1. VCC: Power supply input
2. GND: Ground connection
3. HOLD: Suspends ongoing operations
4. WP: Write protection control
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select input

Functional Features

• Sector Erase and Program: The device supports sector-based erase and program operations, allowing for efficient management of data.
• Write Protection: The WP pin can be used to protect the memory from accidental writes, ensuring data integrity.
• Continuous Read Mode: The S25FL512SAGBHVC13 supports continuous read operations, enabling fast sequential access to stored data.
• Software Reset: A software command can be issued to reset the device, facilitating system-level control.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Durable and reliable design
• Supports sector-based operations

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Relatively high cost compared to other memory technologies

Working Principles

The S25FL512SAGBHVC13 utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit of information. These cells can be electrically programmed and erased using specific voltage levels. During read operations, the stored data is retrieved by sensing the electrical state of each memory cell.

Detailed Application Field Plans

The S25FL512SAGBHVC13 is widely used in various applications, including: 1. Mobile devices: Smartphones, tablets, and portable media players. 2. Digital cameras: Used for storing photos and videos. 3. Solid-state drives (SSDs): Provides non-volatile storage for computer systems. 4. Automotive electronics: Used in infotainment systems, navigation units, and instrument clusters. 5. Industrial equipment: Embedded systems, control units, and data loggers.

Detailed and Complete Alternative Models

1. S25FL128SAGBHVC13: 128 Mbit (16 MB) NOR flash memory device.
2. S25FL256SAGBHVC13: 256 Mbit (32 MB) NOR flash memory device.
3. S25FL1024SAGBHVC13: 1 Gbit (128 MB) NOR flash memory device.

These alternative models offer different storage capacities to suit various application requirements.

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