S25FL256LAGBHB023

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast read and write speeds
  • Low power consumption
  • Reliable data retention
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S25FL256LAGBHB023 has a total of 8 pins:

1. Chip Select (/CS) - Enables communication with the device
2. Serial Clock (SCLK) - Provides timing for data transfer
3. Serial Data Input (SI) - Receives data from the host
4. Serial Data Output (SO) - Transmits data to the host
5. Hold (/HOLD) - Suspends ongoing operations temporarily
6. Write Protect (/WP) - Protects the memory from being written
7. Ground (GND) - Common reference voltage
8. Power Supply (VCC) - Operating voltage input

Functional Features

• High-Speed Performance: The S25FL256LAGBHB023 offers fast read and write speeds, allowing for efficient data transfer.
• Reliable Data Retention: With a data retention period of up to 20 years, the memory ensures long-term storage of information.
• Low Power Consumption: The device operates at low power levels, making it suitable for battery-powered devices.
• Flexible Interface: The SPI interface allows for easy integration with various electronic systems.

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read and write speeds enhance overall system performance - Low power consumption prolongs battery life in portable devices - Reliable data retention ensures data integrity over extended periods

Disadvantages: - Limited erase/program cycles may restrict frequent data modification - Higher cost compared to other types of memory technologies - Requires additional circuitry for interfacing with non-SPI systems

Working Principles

The S25FL256LAGBHB023 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the memory cell's state is determined by measuring the current flow through the transistor. This allows for fast and reliable retrieval of stored information.

Detailed Application Field Plans

The S25FL256LAGBHB023 finds applications in various electronic devices, including but not limited to:

1. Embedded Systems: Used for firmware storage in microcontrollers and IoT devices.
2. Consumer Electronics: Enables data storage in smartphones, tablets, and digital cameras.
3. Automotive: Provides non-volatile memory for infotainment systems and instrument clusters.
4. Industrial Equipment: Used for configuration storage in industrial control systems and automation devices.

Detailed and Complete Alternative Models

1. S25FL128SAGMFI001 - 128 Megabit NOR Flash Memory, SPI Interface
2. MX25L25635FMI-10G - 256 Megabit NOR Flash Memory, SPI Interface
3. W25Q256JVSIQ - 256 Megabit NOR Flash Memory, SPI Interface
4. AT25SF041-SSHD-T - 4 Megabit NOR Flash Memory, SPI Interface

These alternative models offer similar functionality and can be considered as replacements for the S25FL256LAGBHB023 in various applications.

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