S25FL129P0XBHI313

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval
• Characteristics:
  • High-speed data transfer
  • Non-volatile memory
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Advanced flash memory technology
• Packaging/Quantity: Single unit packaging

Specifications

• Memory Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 104 MHz
• Write Protection: Software and hardware write protection options
• Erase Time: Sector erase time of 100ms, block erase time of 1s

Detailed Pin Configuration

The S25FL129P0XBHI313 has a total of 8 pins:

1. VCC: Power supply voltage input
2. GND: Ground connection
3. HOLD: Hold input for suspending ongoing operations
4. WP: Write Protect input for enabling/disabling write operations
5. SCK: Serial Clock input for SPI communication
6. SI: Serial Data Input for SPI communication
7. SO: Serial Data Output for SPI communication
8. CS: Chip Select input for device selection

Functional Features

• High-speed data transfer: The S25FL129P0XBHI313 offers fast read and write speeds, allowing for efficient data transfer.
• Non-volatile memory: The flash memory retains stored data even when power is disconnected, ensuring data integrity.
• Low power consumption: The device operates with low power requirements, making it suitable for battery-powered applications.

Advantages and Disadvantages

Advantages: - High-speed data transfer enables quick access to stored information. - Non-volatile memory ensures data retention without the need for power supply. - Low power consumption prolongs battery life in portable devices.

Disadvantages: - Limited storage capacity compared to other flash memory options. - Relatively higher cost per unit compared to traditional storage solutions.

Working Principles

The S25FL129P0XBHI313 utilizes advanced flash memory technology based on floating gate transistors. It stores data by trapping electric charges within the floating gate, which alters the transistor's conductive properties. This allows for non-volatile storage of digital information that can be read or written using the Serial Peripheral Interface (SPI).

Detailed Application Field Plans

The S25FL129P0XBHI313 is commonly used in various applications, including but not limited to:

1. Consumer Electronics:

   • Smartphones
   • Tablets
   • Digital cameras

2. Automotive:

   • Infotainment systems
   • Navigation systems
   • Instrument clusters

3. Industrial:

   • Data loggers
   • Measurement equipment
   • Control systems

4. Networking:

   • Routers
   • Switches
   • Network attached storage (NAS)

Detailed and Complete Alternative Models

1. S25FL128SAGMFI001: 128 Megabit SPI Flash Memory
2. MX25L12835FM2I-10G: 128 Megabit Serial Flash Memory
3. W25Q128JVSIQ: 128 Megabit SpiFlash Memory

These alternative models offer similar specifications and functionality to the S25FL129P0XBHI313, providing options for different design requirements.

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