S25FL064P0XMFI003M

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Small form factor, surface mount package
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Read Speed: Up to 108 MHz
• Write Speed: Up to 54 MHz
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S25FL064P0XMFI003M flash memory chip has the following pin configuration:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer using SPI interface
• Sector erase and byte/page programming capabilities
• Software and hardware write protection options
• Low power consumption during standby mode
• Efficient error correction algorithms for data integrity

Advantages and Disadvantages

Advantages: - Large storage capacity for data-intensive applications - Fast read/write speeds for quick data access - Non-volatile memory retains data even when power is lost - Compact package size allows for integration into various devices - Versatile interface for easy integration with microcontrollers

Disadvantages: - Limited endurance compared to other memory technologies - Relatively higher cost per unit compared to traditional storage options - Requires additional circuitry for proper interfacing and control

Working Principles

The S25FL064P0XMFI003M flash memory operates based on the principles of floating gate transistors. It uses a series of memory cells, each consisting of a floating gate transistor that can store electrical charge. The presence or absence of charge in the floating gate determines the binary state of each memory cell.

During programming, an electric field is applied to the floating gate, allowing electrons to tunnel through a thin oxide layer and become trapped in the floating gate. This process alters the threshold voltage of the transistor, representing a programmed state.

During reading, the threshold voltage of each memory cell is measured to determine its stored data. The SPI interface enables efficient communication between the flash memory and the controlling device.

Detailed Application Field Plans

The S25FL064P0XMFI003M flash memory chip finds applications in various electronic devices, including but not limited to:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive Systems: Infotainment systems, instrument clusters
3. Industrial Equipment: Data loggers, control systems
4. Networking Devices: Routers, switches, network storage
5. Medical Devices: Patient monitoring systems, diagnostic equipment

Detailed and Complete Alternative Models

1. S25FL032P0XMFI003M: 32 Megabit (4 Megabyte) capacity, similar specifications
2. S25FL128P0XMFI003M: 128 Megabit (16 Megabyte) capacity, higher storage capacity
3. S25FL256SAGMFIR01: 256 Megabit (32 Megabyte) capacity, extended temperature range

These alternative models offer different storage capacities and may have slight variations in specifications to cater to specific application requirements.

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