QMP29GL512P10FFCR10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: 64-ball FBGA package
• Essence: NAND flash memory chip
• Packaging/Quantity: Single chip

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Organization: 8-bit parallel interface
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Up to 90 ns
• Erase Block Size: 128 Kilobytes
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

The QMP29GL512P10FFCR10 has a 64-ball Fine-Pitch Ball Grid Array (FBGA) package with the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | A0-A18 | Address Inputs | | 3 | DQ0-DQ7 | Data Input/Output | | 4 | WE# | Write Enable | | 5 | CE# | Chip Enable | | 6 | RE# | Read Enable | | 7 | CLE | Command Latch Enable | | 8 | ALE | Address Latch Enable | | 9 | WP# | Write Protect | | 10 | RY/BY# | Ready/Busy Status | | 11 | RESET# | Reset | | 12 | NC | No Connection | | 13 | VSS | Ground |

Functional Features

• High-density storage: The QMP29GL512P10FFCR10 offers 512 Megabits of storage capacity, allowing for the storage of large amounts of data.
• Fast read/write speeds: With a read/write speed of up to 90 ns, this flash memory chip enables quick data access and transfer.
• Non-volatile memory: The stored data is retained even when power is removed, making it suitable for applications requiring persistent storage.
• Reliable endurance: The chip can withstand up to 100,000 program/erase cycles, ensuring long-term reliability.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory - Reliable endurance

Disadvantages: - Limited capacity compared to higher-capacity flash memory chips - Higher cost per megabyte compared to larger capacity options

Working Principles

The QMP29GL512P10FFCR10 utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. When reading data, the chip retrieves the stored voltage levels and converts them back into digital information. During writing, the chip applies specific voltage levels to program the memory cells with new data.

Detailed Application Field Plans

The QMP29GL512P10FFCR10 is commonly used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Digital cameras - Mobile phones - Tablets

Detailed and Complete Alternative Models

• QMP29GL256P10FFCR10: 256 Megabit (32 Megabyte) capacity
• QMP29GL1G10FFCR10: 1 Gigabit (128 Megabyte) capacity
• QMP29GL2G10FFCR10: 2 Gigabit (256 Megabyte) capacity

These alternative models offer different storage capacities to suit various application requirements.

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