IS29GL512S-11TFV013

Product Overview

Category

IS29GL512S-11TFV013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL512S-11TFV013 offers a storage capacity of 512 megabits (64 megabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this flash memory device enables quick read and write operations, ensuring efficient data access.
• Reliable performance: The IS29GL512S-11TFV013 is designed to provide reliable and consistent performance, ensuring data integrity and longevity.
• Low power consumption: This flash memory device is optimized for low power consumption, making it suitable for battery-powered devices.
• Compact package: The IS29GL512S-11TFV013 comes in a compact package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The IS29GL512S-11TFV013 is typically packaged in a surface mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: IS29GL512S-11TFV013
• Memory Type: Flash
• Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL512S-11TFV013 has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CE#
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. DQ8
44. DQ9
45. DQ10
46. DQ11
47. DQ12
48. DQ13

Functional Features

• High-speed data transfer: The IS29GL512S-11TFV013 offers fast read and write operations, allowing for quick access to stored data.
• Erase and program capability: This flash memory device supports erase and program operations, enabling data modification as needed.
• Sector-based architecture: The memory is organized into sectors, allowing for efficient management of data storage and retrieval.
• Error correction: The IS29GL512S-11TFV013 incorporates error correction techniques to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited endurance: Flash memory devices have a limited number of erase/write cycles before they may become unreliable.
• Higher cost compared to other types of memory: Flash memory tends to be more expensive than traditional forms of memory.

Working Principles

The IS29GL512S-11TFV013 utilizes the principles of flash memory technology. It stores data in a non-volatile manner, meaning the data remains even when power is removed. The memory cells within the device use floating-gate transistors to trap and store electrical charges, representing binary data (0s and 1s). These charges can be manipulated through erase and program operations, allowing for data modification.

Detailed Application Field Plans

The IS29GL512S-11TFV013 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Utilized for storing photos and videos captured by the camera.
3. Portable media players