IS29GL512S-11DHV01

Product Overview

Category

IS29GL512S-11DHV01 belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High storage capacity: The IS29GL512S-11DHV01 offers a storage capacity of 512 megabits (64 megabytes), allowing for ample data storage.
• Fast data transfer rate: With a high-speed interface, this flash memory chip enables quick data transfer between the device and the memory.
• Reliable performance: The IS29GL512S-11DHV01 ensures reliable and stable performance, making it suitable for various applications.
• Low power consumption: This chip is designed to consume minimal power, enhancing the overall energy efficiency of the device.
• Compact package: The IS29GL512S-11DHV01 comes in a compact package, making it easy to integrate into different electronic devices.

Packaging/Quantity

The IS29GL512S-11DHV01 is typically packaged in a small surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IS29GL512S-11DHV01
• Memory Type: Flash memory
• Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 110 ns
• Package Type: Surface-mount
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL512S-11DHV01 has a specific pin configuration that allows for proper integration and connection within electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. BYTE#: Byte enable control
9. RESET#: Reset control
10. VSS: Ground

Functional Features

• Erase and Program Operations: The IS29GL512S-11DHV01 supports both erase and program operations, allowing for data modification and storage.
• Block Architecture: This flash memory chip is organized into multiple blocks, enabling efficient data management and retrieval.
• Error Correction Code (ECC): The IS29GL512S-11DHV01 incorporates ECC to ensure data integrity and minimize errors during read and write operations.
• Sector Protection: Certain sectors of the memory can be protected from accidental erasure or modification, enhancing data security.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Relatively slower access time compared to some newer flash memory technologies

Working Principles

The IS29GL512S-11DHV01 operates based on the principles of flash memory technology. It utilizes a combination of floating-gate transistors and electrically isolated gates to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased by applying a high voltage, allowing new data to be written.

Detailed Application Field Plans

The IS29GL512S-11DHV01 finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Gaming consoles - Automotive electronics

Detailed and Complete Alternative Models

There are several alternative models available in the market that offer similar functionality to the IS29GL512S-11DHV01. Some notable alternatives include: - Samsung K9F5608U0D - Micron MT29F64G08CBABA - Toshiba TC58NVG2S3ETA00

These alternative models provide comparable storage capacity, interface options, and performance characteristics.

In conclusion, the IS29GL512S-11DHV01 is a flash memory chip with high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and offers advantages such as low power consumption and compact packaging. However, it has limitations regarding compatibility and access time compared to newer flash memory technologies.