IS29GL512S-11DHB02-TR

Product Overview

Category

IS29GL512S-11DHB02-TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL512S-11DHB02-TR offers a storage capacity of 512 megabits (64 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a high-speed interface, this flash memory chip enables quick read and write operations, ensuring efficient data handling.
• Reliable performance: The IS29GL512S-11DHB02-TR is known for its reliability and durability, making it suitable for long-term use.
• Low power consumption: This chip is designed to consume minimal power, contributing to energy efficiency in electronic devices.
• Compact package: The IS29GL512S-11DHB02-TR comes in a small form factor, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL512S-11DHB02-TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Part Number: IS29GL512S-11DHB02-TR
• Memory Type: Flash
• Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL512S-11DHB02-TR has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. BYTE#
33. WP#
34. RY/BY#
35. CE#
36. OE#
37. I/O0
38. I/O1
39. I/O2
40. I/O3
41. I/O4
42. I/O5
43. I/O6
44. I/O7
45. GND
46. NC
47. NC
48. VCC

Functional Features

• Erase and Program Operations: The IS29GL512S-11DHB02-TR supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory chip provides the option to lock specific blocks of memory, preventing accidental modification or erasure.
• Read and Write Protection: The IS29GL512S-11DHB02-TR offers various protection mechanisms to safeguard stored data from unauthorized access or alteration.
• Error Correction: Built-in error correction algorithms ensure data integrity and reliability during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory chips

Working Principles

The IS29GL512S-11DHB02-TR utilizes the principles of flash memory technology. It stores data by trapping electric charges in a floating gate, which can be electrically programmed or erased. The stored charges represent binary information (0s and 1s), allowing for non-volatile data storage.

Detailed Application Field Plans

The IS29GL512S-11DHB02-TR is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Used for storing photos and videos captured by the camera.
3. Portable media players: Used for storing music, videos, and other multimedia content.
4. Industrial control systems: Used for storing critical data and firmware in