IS29GL512S-11DHB013

Product Overview

Category

IS29GL512S-11DHB013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

IS29GL512S-11DHB013 is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL512S-11DHB013 lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic applications.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS29GL512S-11DHB013 units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IS29GL512S-11DHB013
• Memory Type: Flash memory
• Capacity: 512 megabits (64 megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 110 ns
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of IS29GL512S-11DHB013 is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. RP# - Ready/Busy status
8. RESET# - Reset control
9. BYTE# - Byte enable control

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Easy integration into various electronic devices
• Support for multiple read and write operations
• Error correction and detection mechanisms

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Large storage capacity
• Low power consumption
• Compact size
• Wide compatibility with different electronic devices

Disadvantages

• Limited endurance (limited number of erase/write cycles)
• Relatively higher cost compared to other memory technologies

Working Principles

IS29GL512S-11DHB013 utilizes flash memory technology, which is based on the principle of storing data in floating gate transistors. The data is stored as electrical charges trapped within the floating gate, allowing it to retain information even when the power is turned off. The memory cells are organized in a grid-like structure, with each cell representing a bit of data.

During read operations, the stored charges are measured to determine the logic state of each memory cell. During write operations, the charges are either added or removed from the floating gate to change the logic state of the cell.

Detailed Application Field Plans

IS29GL512S-11DHB013 finds applications in various electronic devices that require reliable and high-capacity data storage. Some of the specific application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Portable media players
4. Automotive electronics
5. Industrial control systems
6. Embedded systems

Detailed and Complete Alternative Models

• IS29GL256S-10DHB013
• IS29GL128S-12DHB013
• IS29GL064S-15DHB013
• IS29GL032S-20DHB013
• IS29GL016S-25DHB013

These alternative models offer varying capacities and performance characteristics, allowing users to choose the most suitable option for their specific requirements.

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