IS29GL256S-10TFV02-TR

Product Overview

Category

IS29GL256S-10TFV02-TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High storage capacity: The IS29GL256S-10TFV02-TR offers a storage capacity of 256 gigabits, allowing for ample data storage.
• Fast data transfer rate: With a speed of 10 nanoseconds, this flash memory chip ensures quick access to stored data.
• Reliable performance: The product is known for its durability and ability to retain data even in harsh environmental conditions.
• Low power consumption: The IS29GL256S-10TFV02-TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: This flash memory chip comes in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The IS29GL256S-10TFV02-TR is typically packaged in trays or reels. Each tray/reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Model: IS29GL256S-10TFV02-TR
• Storage Capacity: 256 gigabits
• Access Time: 10 nanoseconds
• Supply Voltage: 3.3 volts
• Package Type: Thin Small Outline Package (TSOP)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL256S-10TFV02-TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• Erase and Program Operations: The IS29GL256S-10TFV02-TR supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Block Locking: This flash memory chip provides the option to lock specific blocks, preventing accidental modification or erasure of critical data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to detect and correct errors during data read/write operations, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast access time ensures quick retrieval of stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.
• Reliable performance in harsh environmental conditions.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to a finite number of erase/write cycles.

Working Principles

The IS29GL256S-10TFV02-TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically erased and reprogrammed. When reading data, the stored charge is detected, allowing retrieval of the stored information.

Detailed Application Field Plans

The IS29GL256S-10TFV02-TR finds applications in various electronic devices, including: 1. Solid-state drives (SSDs) 2. USB flash drives 3. Digital cameras 4. Smartphones and tablets 5. Embedded systems

Alternative Models

Here are some alternative models that offer similar functionality: 1. Samsung K9F2G08U0C 2. Micron MT29F2G08ABAEAWP 3. Toshiba TC58NVG2S0FTA00

These alternative models provide comparable storage capacity, access time, and package options as the IS29GL256S-10TFV02-TR.

In conclusion,