IS29GL128S-10TFV02-TR

Product Overview

Category

IS29GL128S-10TFV02-TR belongs to the category of flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL128S-10TFV02-TR offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory chip ensures quick read and write operations, enhancing overall device performance.
• Reliable and durable: The IS29GL128S-10TFV02-TR is designed to withstand frequent data access and can endure harsh environmental conditions, making it suitable for various applications.
• Low power consumption: This chip is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: The IS29GL128S-10TFV02-TR comes in a small form factor, enabling easy integration into different electronic devices.

Packaging/Quantity

The IS29GL128S-10TFV02-TR is typically packaged in tape and reel format, ensuring safe transportation and convenient handling during manufacturing processes. It is commonly available in quantities of 1000 units per reel.

Specifications

• Manufacturer: Integrated Silicon Solution Inc. (ISSI)
• Model: IS29GL128S-10TFV02-TR
• Memory Type: Flash memory
• Capacity: 128 gigabits (16 gigabytes)
• Speed Rating: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL128S-10TFV02-TR features a 48-pin TSOP package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RE#
48. VSS

Functional Features

• High-speed data transfer: The IS29GL128S-10TFV02-TR offers fast read and write operations, enabling quick access to stored data.
• Reliable data retention: This flash memory chip ensures data integrity and reliability over extended periods of time.
• Erase and program capability: The IS29GL128S-10TFV02-TR supports both sector erase and byte programming, allowing for flexible data manipulation.
• Error correction: Integrated error correction algorithms enhance data accuracy and integrity.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Compact form factor
• Low power consumption
• Reliable and durable

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory chips

Working Principles

The IS29GL128S-10TFV02-TR utilizes the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, enabling the transfer of electrons to or from the floating gates.

Detailed Application Field Plans

The IS29GL128S-10TFV02-TR is widely used in various electronic devices that require high-capacity and reliable data storage. Some common application fields include:

1. Smartphones and tablets: These devices rely