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IS29GL128S-10DHB010

IS29GL128S-10DHB010

Product Overview

Category

IS29GL128S-10DHB010 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

  • High storage capacity: The IS29GL128S-10DHB010 offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory device ensures quick and efficient data access and retrieval.
  • Reliable performance: The IS29GL128S-10DHB010 is known for its high reliability and durability, making it suitable for long-term data storage.
  • Low power consumption: This flash memory device is designed to consume minimal power, contributing to energy efficiency in electronic devices.
  • Compact package: The IS29GL128S-10DHB010 comes in a small form factor package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL128S-10DHB010 is typically packaged in a surface mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

  • Memory Type: Flash
  • Capacity: 128 gigabits (16 gigabytes)
  • Access Time: 10 nanoseconds
  • Interface: Parallel
  • Supply Voltage: 3.3V
  • Package Type: Surface Mount Technology (SMT)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS29GL128S-10DHB010 has a total of 48 pins. Here is a detailed pin configuration:

  1. VCC - Power supply voltage
  2. A0-A18 - Address inputs
  3. DQ0-DQ15 - Data input/output lines
  4. WE# - Write enable
  5. CE# - Chip enable
  6. OE# - Output enable
  7. RESET# - Reset signal
  8. WP#/ACC - Write protect/acceleration function
  9. RY/BY# - Ready/busy status output
  10. VSS - Ground

Functional Features

  • High-speed data transfer: The IS29GL128S-10DHB010 offers fast read and write operations, allowing for efficient data transfer between the flash memory and the host device.
  • Error correction: This flash memory device incorporates error correction techniques to ensure data integrity and reliability.
  • Block erase capability: The IS29GL128S-10DHB010 supports block erase operations, enabling selective erasure of specific memory blocks.
  • Wear-leveling algorithm: To prolong the lifespan of the flash memory, this device utilizes a wear-leveling algorithm that evenly distributes write operations across memory cells.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Limited compatibility with certain older devices that do not support parallel interfaces
  • Relatively higher cost compared to lower-capacity flash memory options

Working Principles

The IS29GL128S-10DHB010 operates based on the principles of flash memory technology. It utilizes floating-gate transistors to store data in non-volatile memory cells. When data is written, charges are trapped in the floating gate, representing binary information. These charges can be electrically erased when needed. During read operations, the stored charges are measured to determine the stored data.

Detailed Application Field Plans

The IS29GL128S-10DHB010 is widely used in various electronic devices that require high-capacity and reliable data storage. Some of the common application fields include:

  1. Computers: Used as primary or secondary storage in desktops, laptops, and servers.
  2. Smartphones and Tablets: Provides storage for operating systems, applications, and user data.
  3. Digital Cameras: Stores high-resolution photos and videos captured by the camera.
  4. Gaming Consoles: Used for game storage and system software.
  5. Industrial Control Systems: Provides non-volatile storage for critical data in industrial automation and control applications.

Detailed and Complete Alternative Models

  • IS29GL256S-10DHB010: A higher capacity version with 256 gigabits (32 gigabytes) of storage.
  • IS29GL064S-10DHB010: A lower capacity version with 64 gigabits (8 gigabytes) of storage.
  • IS29GL512S-10DHB010: An even higher capacity version with 512 gigabits (64 gigabytes) of storage.

These alternative models offer different storage capacities to cater to varying requirements of different applications.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IS29GL128S-10DHB010 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IS29GL128S-10DHB010 in technical solutions:

  1. Q: What is IS29GL128S-10DHB010? A: IS29GL128S-10DHB010 is a specific model of flash memory chip manufactured by Integrated Silicon Solution Inc. It has a capacity of 128 megabits (16 megabytes) and operates at a speed of 10 nanoseconds.

  2. Q: What are the typical applications of IS29GL128S-10DHB010? A: IS29GL128S-10DHB010 is commonly used in various technical solutions such as embedded systems, consumer electronics, automotive applications, industrial control systems, and networking devices.

  3. Q: How does IS29GL128S-10DHB010 connect to a microcontroller or processor? A: IS29GL128S-10DHB010 uses a standard parallel interface to connect with microcontrollers or processors. It typically requires address lines, data lines, control signals, and power supply connections.

  4. Q: What voltage levels does IS29GL128S-10DHB010 support? A: IS29GL128S-10DHB010 supports a single power supply voltage of 3.3 volts (Vcc).

  5. Q: Can IS29GL128S-10DHB010 be used for code storage in microcontrollers? A: Yes, IS29GL128S-10DHB010 can be used for storing program code in microcontrollers that have a parallel flash memory interface.

  6. Q: Does IS29GL128S-10DHB010 support random access read and write operations? A: Yes, IS29GL128S-10DHB010 supports random access read and write operations, allowing data to be accessed from any memory location.

  7. Q: What is the typical endurance of IS29GL128S-10DHB010? A: IS29GL128S-10DHB010 has a typical endurance of 100,000 program/erase cycles, meaning it can be reliably written and erased up to 100,000 times.

  8. Q: Can IS29GL128S-10DHB010 operate in harsh environmental conditions? A: Yes, IS29GL128S-10DHB010 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand vibration and shock commonly encountered in industrial or automotive applications.

  9. Q: Does IS29GL128S-10DHB010 have built-in error correction capabilities? A: No, IS29GL128S-10DHB010 does not have built-in error correction capabilities. It is recommended to use external error correction techniques if required.

  10. Q: Are there any specific programming considerations for IS29GL128S-10DHB010? A: Yes, IS29GL128S-10DHB010 requires specific programming algorithms and voltage levels to ensure proper operation. The datasheet provided by the manufacturer should be consulted for detailed programming guidelines.

Please note that these answers are general and may vary depending on the specific requirements and implementation of IS29GL128S-10DHB010 in different technical solutions.