IS29GL01GS-11TFV010

Product Overview

Category

IS29GL01GS-11TFV010 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Low power consumption
• Compact size
• Durable and reliable

Package

IS29GL01GS-11TFV010 is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL01GS-11TFV010 lies in its ability to provide high-speed and reliable data storage in a compact package.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS29GL01GS-11TFV010 units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 110 ns
• Erase/Program Suspend & Resume Support
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors

Detailed Pin Configuration

The IS29GL01GS-11TFV010 flash memory device has the following pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Power-down
8. RY/BY# - Ready/busy status output

Functional Features

• High-speed data transfer
• Reliable data storage
• Erase and program operations at the sector level
• Suspend and resume support for erase and program operations
• Low power consumption during standby mode
• Built-in ready/busy status output for easy interface control

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage in electronic devices.
• Fast read and write speeds ensure quick access to stored data.
• Low power consumption helps prolong battery life in portable devices.
• Compact size enables integration into small form factor devices.
• Reliable and durable, ensuring data integrity over time.

Disadvantages

• Limited storage capacity compared to other flash memory options.
• Parallel interface may not be compatible with all devices.
• Higher cost compared to lower capacity flash memory options.

Working Principles

IS29GL01GS-11TFV010 utilizes a floating gate transistor technology to store data. It employs a parallel interface to communicate with the host device. When data is written, the charge is trapped in the floating gate, representing a binary value. During read operations, the charge is sensed to retrieve the stored data.

Detailed Application Field Plans

IS29GL01GS-11TFV010 finds applications in various electronic devices that require non-volatile data storage. Some of the common application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices

Detailed and Complete Alternative Models

1. IS29GL02GS-11TFV010: 2 gigabit (256 megabytes) flash memory device with similar specifications.
2. IS29GL512S-11TFV010: 512 megabit (64 megabytes) flash memory device with similar specifications.
3. IS29GL256S-11TFV010: 256 megabit (32 megabytes) flash memory device with similar specifications.

These alternative models offer different storage capacities to cater to various application requirements.

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