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CY7S1061G18-15ZSXIT

CY7S1061G18-15ZSXIT

Product Overview

Category

CY7S1061G18-15ZSXIT belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

  • High-speed operation
  • Low power consumption
  • Large storage capacity
  • Compact package size

Package

CY7S1061G18-15ZSXIT is available in a small form factor package, which ensures easy integration into various electronic devices.

Essence

The essence of CY7S1061G18-15ZSXIT lies in its ability to provide reliable and efficient data storage solutions for electronic devices.

Packaging/Quantity

CY7S1061G18-15ZSXIT is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Density: 1 Gb (Gigabit)
  • Organization: 128M words x 8 bits
  • Operating Voltage: 1.35V - 1.5V
  • Speed Grade: 15 (1500 MHz)
  • Interface: Double Data Rate (DDR3)
  • Package Type: 78-ball VFBGA (Very Fine Pitch Ball Grid Array)

Detailed Pin Configuration

The pin configuration of CY7S1061G18-15ZSXIT is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. CKE
  45. CK
  46. VSS
  47. DM0
  48. DM1
  49. VREF
  50. VSS
  51. ODT
  52. VSS
  53. DQS0#
  54. DQS0
  55. VSS
  56. DQS1#
  57. DQS1
  58. VSS
  59. DQS2#
  60. DQS2
  61. VSS
  62. DQS3#
  63. DQS3
  64. VSS
  65. VDD
  66. VDD
  67. VDD
  68. VSS
  69. VSS
  70. VSS
  71. VSS
  72. VSS
  73. VSS
  74. VSS
  75. VSS
  76. VSS
  77. VSS
  78. VSS

Functional Features

  • High-speed data transfer
  • Burst mode operation
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Low-power standby mode

Advantages and Disadvantages

Advantages

  • High-speed operation enables faster data access
  • Low power consumption prolongs battery life in portable devices
  • Large storage capacity allows for storing a vast amount of data
  • Compact package size facilitates integration into space-constrained devices

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited compatibility with older device interfaces

Working Principles

CY7S1061G18-15ZSXIT operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers and employs a series of capacitors to store and retrieve data.

Detailed Application Field Plans

CY7S1061G18-15ZSXIT finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Mobile devices - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to CY7S1061G18-15ZSXIT include: - MT41K128M16JT-125:K - K4B2G1646E-BCK0 - IS

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací CY7S1061G18-15ZSXIT v technických řešeních

Sure! Here are 10 common questions and answers related to the application of CY7S1061G18-15ZSXIT in technical solutions:

Q1: What is the CY7S1061G18-15ZSXIT? A1: The CY7S1061G18-15ZSXIT is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Cypress Semiconductor.

Q2: What is the capacity of the CY7S1061G18-15ZSXIT? A2: The CY7S1061G18-15ZSXIT has a capacity of 1 Megabit (128K x 8 bits).

Q3: What is the operating voltage range for the CY7S1061G18-15ZSXIT? A3: The CY7S1061G18-15ZSXIT operates within a voltage range of 2.5V to 3.6V.

Q4: What is the speed rating of the CY7S1061G18-15ZSXIT? A4: The CY7S1061G18-15ZSXIT has a speed rating of 15 nanoseconds (ns), indicating its access time.

Q5: Can the CY7S1061G18-15ZSXIT be used in industrial applications? A5: Yes, the CY7S1061G18-15ZSXIT is suitable for use in industrial applications due to its wide operating temperature range and reliability.

Q6: Is the CY7S1061G18-15ZSXIT compatible with other memory interfaces? A6: Yes, the CY7S1061G18-15ZSXIT supports standard asynchronous and synchronous memory interfaces, making it compatible with various systems.

Q7: Can the CY7S1061G18-15ZSXIT be used in battery-powered devices? A7: Yes, the CY7S1061G18-15ZSXIT's low power consumption makes it suitable for use in battery-powered devices.

Q8: Does the CY7S1061G18-15ZSXIT have any built-in error correction capabilities? A8: No, the CY7S1061G18-15ZSXIT does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

Q9: What is the package type of the CY7S1061G18-15ZSXIT? A9: The CY7S1061G18-15ZSXIT comes in a 48-pin TSOP (Thin Small Outline Package) form factor.

Q10: Can the CY7S1061G18-15ZSXIT be easily integrated into existing designs? A10: Yes, the CY7S1061G18-15ZSXIT follows industry-standard pinout and interface specifications, making it relatively easy to integrate into existing designs.

Please note that these answers are general and specific details should be referred to the datasheet or manufacturer's documentation for accurate information.