CY7C2565XV18-600BZC

Product Overview

Category

The CY7C2565XV18-600BZC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C2565XV18-600BZC offers a high-speed data transfer rate, enabling efficient processing of large amounts of data.
• Large Capacity: With a capacity of 256 megabits (32 megabytes), this SRAM chip provides ample storage space for demanding applications.
• Low Power Consumption: Despite its high performance, the CY7C2565XV18-600BZC is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable Operation: This chip incorporates advanced error correction techniques, ensuring data integrity and system stability.
• Wide Temperature Range: The CY7C2565XV18-600BZC can operate reliably across a wide temperature range, making it suitable for use in harsh environments.

Package

The CY7C2565XV18-600BZC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package offers excellent thermal dissipation properties and facilitates easy integration into circuit boards.

Essence

The essence of the CY7C2565XV18-600BZC lies in its ability to provide high-speed and reliable data storage, catering to the needs of modern electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of CY7C2565XV18-600BZC chips. The exact quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Memory Type: Synchronous SRAM
• Capacity: 256 Megabits (32 Megabytes)
• Data Bus Width: 18 bits
• Access Time: 6 ns
• Operating Voltage: 3.3V
• Package Type: BGA
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY7C2565XV18-600BZC features a specific pin configuration that enables seamless integration into electronic circuits. The detailed pin configuration is as follows:

1. VDDQ: Power Supply
2. VSSQ: Ground
3. NC: No Connection
4. A0-A16: Address Inputs
5. DQ0-DQ17: Data Inputs/Outputs
6. WE#: Write Enable
7. OE#: Output Enable
8. CKE: Clock Enable
9. CS#: Chip Select
10. CLK: Clock Input
11. LDQM, UDQM: Data Masking Signals
12. BA0, BA1: Bank Address Inputs
13. RAS#, CAS#: Row and Column Address Strobes
14. DM0-DM3: Byte Mask Inputs/Outputs
15. DQS0-DQS2: Data Strobe Inputs/Outputs
16. DQSN0-DQSN2: Data Strobe Negative Inputs/Outputs
17. VREF: Reference Voltage
18. VTT: Termination Voltage

Functional Features

The CY7C2565XV18-600BZC offers several functional features that enhance its performance and usability:

• Burst Mode Operation: This chip supports burst mode operation, allowing for efficient consecutive data transfers.
• On-Chip Error Correction: Advanced error correction techniques are integrated into the chip, ensuring data integrity and minimizing the impact of potential errors.
• Low Latency: The CY7C2565XV18-600BZC provides low latency access to stored data, enabling fast and responsive system performance.
• Multiple Banks: With two selectable banks, this SRAM chip allows for simultaneous access to different memory locations, enhancing overall system efficiency.

Advantages and Disadvantages

Advantages

• High-speed data transfer rate
• Large storage capacity
• Low power consumption
• Reliable operation with error correction
• Wide temperature range suitability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Requires additional circuitry for proper interfacing

Working Principles

The CY7C2565XV18-600BZC operates based on the principles of synchronous static random access memory. It utilizes a clock signal to synchronize data transfers and employs address inputs to select specific memory locations. The chip's internal circuitry ensures reliable storage and retrieval of data, while error correction techniques enhance data integrity.

Detailed Application Field Plans

The CY7C2565XV18-600BZC