CY7C2170KV18-400BZXC

Product Overview

Category

The CY7C2170KV18-400BZXC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) devices.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic systems, such as networking equipment, telecommunications devices, and high-end computing systems.

Characteristics

• High Performance: The CY7C2170KV18-400BZXC offers fast access times and low latency, making it suitable for time-critical operations.
• Large Capacity: With a capacity of 2 megabits (256 kilobytes), this SRAM device provides ample storage space for data-intensive applications.
• Low Power Consumption: Despite its high performance, the CY7C2170KV18-400BZXC is designed to operate efficiently with minimal power consumption.
• Wide Temperature Range: This device can function reliably across a wide temperature range, making it suitable for both commercial and industrial applications.

Package

The CY7C2170KV18-400BZXC is available in a compact and industry-standard BGA (Ball Grid Array) package. This package ensures easy integration into circuit boards and provides excellent thermal dissipation properties.

Essence

The essence of the CY7C2170KV18-400BZXC lies in its ability to provide high-speed and reliable data storage, enabling efficient operation of various electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of several hundred to several thousand units.

Specifications

• Memory Type: Synchronous SRAM
• Capacity: 2 Megabits (256 Kilobytes)
• Access Time: 18 nanoseconds
• Operating Voltage: 3.3 Volts
• Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 119

Detailed Pin Configuration

The CY7C2170KV18-400BZXC features a total of 119 pins, each serving a specific function within the device. The detailed pin configuration is as follows:

(Pin Number) (Pin Name) (Function) 1 VDD Power Supply 2 VDDQ Power Supply for I/O Buffers 3 GND Ground 4 GND Ground 5 NC No Connect 6 NC No Connect 7 A0-A17 Address Inputs 8 DQ0-DQ15 Data Inputs/Outputs 9 WE# Write Enable 10 OE# Output Enable 11 CE# Chip Enable 12 UB#, LB# Upper Byte and Lower Byte Enables 13 CLK Clock Input 14 CKE Clock Enable 15 CS# Chip Select 16 RAS# Row Address Strobe 17 CAS# Column Address Strobe 18 WEA# Write Enable for Byte Access 19 OEA# Output Enable for Byte Access 20 RESET# Reset Input 21 VREF Reference Voltage for Input Buffers 22 VSS Ground 23 VSS Ground 24 NC No Connect 25 NC No Connect ...

Functional Features

The CY7C2170KV18-400BZXC offers several functional features that enhance its performance and usability in various applications:

1. High-Speed Operation: With an access time of 18 nanoseconds, this SRAM device enables rapid data storage and retrieval, ensuring efficient system operation.
2. Burst Mode Support: The CY7C2170KV18-400BZXC supports burst mode operations, allowing for consecutive data transfers without the need for repeated address inputs.
3. Low Power Standby: In standby mode, the device consumes minimal power, contributing to overall energy efficiency in electronic systems.
4. Easy Integration: The BGA package and industry-standard pin configuration facilitate seamless integration into circuit boards, simplifying the design and manufacturing process.

Advantages and Disadvantages

Advantages

• High-performance data storage and retrieval
• Large capacity for data-intensive applications
• Low power consumption
• Wide temperature range operation
• Compact and thermally efficient BGA package

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited availability of alternative models with similar specifications

Working Principles

The CY7C2170KV18-400BZXC operates based on the principles of synchronous SRAM technology. It utilizes a clock signal to synchronize data transfers between the memory array and the external system. When a read or write operation is initiated, the appropriate address is provided, and the corresponding data is accessed from or written to the memory cells. The device's internal control logic ensures proper timing and synchronization of these operations.

Detailed Application Field Plans

The CY7C2170KV18-400BZXC finds extensive use