CY7C2163KV18-550BZXI

Product Overview

Category

The CY7C2163KV18-550BZXI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C2163KV18-550BZXI offers fast access times and high bandwidth, making it suitable for demanding applications.
• Large Capacity: With a capacity of 16 megabits (2 megabytes), this chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C2163KV18-550BZXI is designed to operate efficiently, minimizing power consumption.
• Wide Temperature Range: This chip can function reliably across a wide temperature range, making it suitable for use in various environments.
• RoHS Compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package and Quantity

The CY7C2163KV18-550BZXI is available in a compact and industry-standard BGA (Ball Grid Array) package. Each package contains one unit of the chip.

Specifications

• Organization: 2M x 8 bits
• Voltage Supply: 1.7V - 1.9V
• Access Time: 5.5 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Interface: Parallel

Pin Configuration

The CY7C2163KV18-550BZXI follows a standard pin configuration for synchronous SRAM chips. The detailed pinout is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. /WE
12. /OE
13. A0
14. A1
15. A2
16. A3
17. A4
18. A5
19. A6
20. A7
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. /CE1
30. /CE2
31. /CE3
32. /CE4
33. /CE5
34. /CE6
35. /CE7
36. /CE8
37. CLK
38. /BYTE

Functional Features

The CY7C2163KV18-550BZXI offers the following functional features:

• Synchronous Operation: The chip synchronizes data transfers with an external clock signal, ensuring reliable and accurate data handling.
• Burst Mode: It supports burst read and write operations, allowing for efficient data transfer between the memory and the processor.
• Byte Write Enable: The /BYTE pin enables byte-level write operations, providing flexibility in data manipulation.
• Chip Enable Control: Multiple chip enable pins (/CE1 to /CE8) allow for selective activation of individual memory banks, optimizing resource utilization.

Advantages and Disadvantages

Advantages

• High performance and fast access times
• Large storage capacity
• Low power consumption
• Wide temperature range compatibility
• RoHS compliant, environmentally friendly

Disadvantages

• Limited availability of alternative models
• Relatively higher cost compared to lower-performance memory options

Working Principles

The CY7C2163KV18-550BZXI operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize data transfers between the memory and the external processor. The chip's internal circuitry ensures reliable storage and retrieval of data, providing high-speed access times.

Application Field Plans

The CY7C2163KV18-550BZXI finds applications in various fields that require fast and reliable data storage. Some potential application areas include:

1. Computer Systems: Used as cache memory or main memory in high-performance computers.
2. Networking Equipment: Employed for packet buffering and data caching in routers and switches.
3. Telecommunications Systems: Utilized for storing voice and data information in telecommunication infrastructure.
4. Industrial Automation: Applied in control systems and data logging devices for efficient data handling.

Alternative Models

While the CY7C2163KV18-550BZXI is a highly capable synchronous SRAM chip, alternative models with similar specifications are also available in the market. Some notable alternatives include: