CY7C1512KV18-250BZXC

Product Overview

Category

The CY7C1512KV18-250BZXC belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1512KV18-250BZXC offers fast access times and high-speed data transfer rates, making it suitable for demanding applications.
• Large Capacity: With a capacity of 1,048,576 bits (128K x 8), this SRAM chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C1512KV18-250BZXC is designed to operate efficiently with low power consumption, making it suitable for battery-powered devices.
• Reliable Operation: This chip incorporates advanced error correction techniques and robust design features to ensure data integrity and system reliability.
• Wide Temperature Range: The CY7C1512KV18-250BZXC can operate reliably over a wide temperature range, making it suitable for use in harsh environments.

Package and Quantity

The CY7C1512KV18-250BZXC is available in a compact BGA (Ball Grid Array) package. Each package contains one unit of the SRAM chip.

Specifications

• Organization: 128K x 8
• Voltage Supply: 1.7V - 1.9V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 165-ball BGA

Pin Configuration

The CY7C1512KV18-250BZXC features a 165-ball BGA package with the following pin configuration:

Pin Name Description 1 VDD Power Supply 2 VDDQ Power Supply for I/O Buffers 3 DQ0 Data Input/Output Bit 0 4 DQ1 Data Input/Output Bit 1 5 DQ2 Data Input/Output Bit 2 6 DQ3 Data Input/Output Bit 3 7 DQ4 Data Input/Output Bit 4 8 DQ5 Data Input/Output Bit 5 9 DQ6 Data Input/Output Bit 6 10 DQ7 Data Input/Output Bit 7 11 A0 Address Bit 0 12 A1 Address Bit 1 13 A2 Address Bit 2 14 A3 Address Bit 3 15 A4 Address Bit 4 16 A5 Address Bit 5 17 A6 Address Bit 6 18 A7 Address Bit 7 19 A8 Address Bit 8 20 A9 Address Bit 9 ... ... ...

Functional Features

• Asynchronous and Synchronous Operation: The CY7C1512KV18-250BZXC supports both asynchronous and synchronous operation modes, providing flexibility in different system configurations.
• Burst Mode: This SRAM chip offers burst mode access, allowing for efficient data transfer between the memory and the processor.
• Write Protection: The CY7C1512KV18-250BZXC includes write protection features to prevent accidental modification of stored data.
• Easy Integration: With its industry-standard interface and compatibility with various microprocessors, this SRAM chip can be easily integrated into existing systems.

Advantages and Disadvantages

Advantages

• High performance and fast access times
• Large storage capacity
• Low power consumption
• Reliable operation with error correction techniques
• Wide temperature range for versatile applications

Disadvantages

• Limited availability of alternative models
• Relatively higher cost compared to other memory technologies

Working Principles

The CY7C1512KV18-250BZXC operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Application Field Plans

The CY7C1512KV18-250BZXC finds application in various fields, including: 1. Computer Systems: Used as cache memory or main memory in high-performance computers. 2. Networking Equipment: Employed in routers, switches, and network interface cards for fast data processing. 3. Telecommunications Systems: Utilized in base stations, transmission equipment, and communication servers for reliable data storage and retrieval.

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