CY7C1472BV25-200BZI

Introduction

The CY7C1472BV25-200BZI is a high-performance synchronous SRAM (Static Random Access Memory) belonging to the category of semiconductor memory devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Memory Device
• Use: The CY7C1472BV25-200BZI is commonly used in applications requiring high-speed and reliable data storage and retrieval, such as networking equipment, telecommunications systems, and industrial automation.
• Characteristics: It offers high-speed access, low power consumption, and high reliability, making it suitable for demanding applications.
• Package: The CY7C1472BV25-200BZI is typically available in compact and industry-standard packages, ensuring compatibility with various system designs.
• Essence: Its essence lies in providing fast and efficient data storage and retrieval capabilities for electronic systems.
• Packaging/Quantity: It is usually supplied in tape and reel packaging, with quantities varying based on customer requirements.

Specifications

• Memory Size: 4Mbit
• Organization: 256K x 16
• Voltage - Supply: 2.25 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Speed: 200MHz
• Interface: Parallel
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-VFBGA (7x7)

Detailed Pin Configuration

The detailed pin configuration of the CY7C1472BV25-200BZI includes 48 pins arranged in a specific layout to facilitate its integration into various electronic systems. The pinout diagram and associated functions are provided in the product datasheet for precise implementation.

Functional Features

The CY7C1472BV25-200BZI offers the following key functional features: - High-speed synchronous operation - Low-power consumption - Asynchronous output enable control - Automatic power-down when deselected - Easy memory expansion through chip enable and output enable features

Advantages and Disadvantages

Advantages

• High-speed access
• Low power consumption
• Reliable data storage and retrieval
• Easy integration into system designs

Disadvantages

• Limited memory size compared to newer alternatives
• Sensitive to voltage fluctuations

Working Principles

The CY7C1472BV25-200BZI operates based on synchronous SRAM technology, where data is stored and retrieved using clock signals to ensure precise timing and high-speed access. It utilizes low-power circuitry to minimize energy consumption while maintaining data integrity.

Detailed Application Field Plans

The CY7C1472BV25-200BZI finds extensive use in the following application fields: - Networking Equipment: for buffering and caching data - Telecommunications Systems: for storing critical operational parameters - Industrial Automation: for rapid data processing and control

Detailed and Complete Alternative Models

Several alternative models offering similar functionality and performance to the CY7C1472BV25-200BZI include: - AS6C4008-55SIN by Alliance Memory, Inc. - IS61LV25616AL-10TLI by ISSI, Integrated Silicon Solution Inc. - WED3EBG4M72A1 by Winbond Electronics

In conclusion, the CY7C1472BV25-200BZI serves as a reliable and high-performance synchronous SRAM solution for diverse electronic applications, offering high-speed access, low power consumption, and robust data storage capabilities.

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