CY7C1426KV18-300BZXC

Product Overview

Category

The CY7C1426KV18-300BZXC belongs to the category of high-performance synchronous static random access memory (SRAM) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1426KV18-300BZXC offers fast access times and low latency, making it suitable for demanding applications.
• Large Capacity: With a capacity of 4 megabits (512 kilobytes), this SRAM chip provides ample storage space for data-intensive tasks.
• Low Power Consumption: Despite its high performance, the CY7C1426KV18-300BZXC is designed to operate efficiently with minimal power consumption.
• Wide Temperature Range: This chip can function reliably across a wide temperature range, making it suitable for use in various environments.
• RoHS Compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The CY7C1426KV18-300BZXC is available in a compact BGA (Ball Grid Array) package. Each package contains one unit of the SRAM chip.

Specifications

• Organization: 512K x 8 bits
• Operating Voltage: 1.8V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 165-ball BGA

Pin Configuration

The CY7C1426KV18-300BZXC features a 165-ball BGA package with the following pin configuration:

```

Pin Name Function

A0-A18 Address Inputs DQ0-DQ7 Data Inputs/Outputs WE# Write Enable OE# Output Enable CE1#, CE2# Chip Enables UB#, LB# Byte Enables VDD, VSS Power Supply and Ground ```

Functional Features

• Asynchronous and Synchronous Operation: The CY7C1426KV18-300BZXC supports both asynchronous and synchronous operation modes, providing flexibility in different system designs.
• Burst Mode Support: This SRAM chip offers burst read and write operations, allowing for efficient data transfer.
• Automatic Power Down: When not in use, the chip automatically enters a low-power mode to conserve energy.
• Easy Integration: The CY7C1426KV18-300BZXC can be easily integrated into existing systems due to its standard interface and compatibility with various microcontrollers.

Advantages and Disadvantages

Advantages

• High-performance data storage solution
• Low power consumption
• Wide temperature range operation
• RoHS compliant, environmentally friendly

Disadvantages

• Relatively small capacity compared to other memory technologies
• Limited availability of alternative models

Working Principles

The CY7C1426KV18-300BZXC operates based on the principles of static random access memory. It stores data in a volatile manner using flip-flops, which retain information as long as power is supplied. The chip utilizes address inputs to locate specific memory locations and enables read or write operations accordingly. The synchronous operation mode ensures precise timing and reliable data transfer.

Application Field Plans

The CY7C1426KV18-300BZXC finds applications in various fields, including: - Computer Systems: Used as cache memory or main memory in desktops, laptops, and servers. - Networking Equipment: Employed in routers, switches, and network cards for fast data processing. - Telecommunications Systems: Utilized in base stations, switches, and transmission equipment for efficient data handling.

Alternative Models

While the CY7C1426KV18-300BZXC is a reliable SRAM chip, alternative models with similar specifications include: - CY7C1425KV18-300BZXC - MT45W8MW16BGX-701 WT:B - AS7C34096A-10TIN

These alternative models can be considered based on availability and specific project requirements.

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