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CY6264-55SNXI

CY6264-55SNXI

Product Overview

Category

CY6264-55SNXI belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing digital information in electronic systems.

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High-speed operation: Enables quick access to stored data.
  • Compact size: Occupies minimal space on electronic circuit boards.

Package

CY6264-55SNXI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of CY6264-55SNXI lies in its ability to provide reliable and efficient storage of digital data in various electronic applications.

Packaging/Quantity

CY6264-55SNXI is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of the product. The exact quantity may vary depending on the supplier.

Specifications

  • Memory capacity: 8 kilobits (64 kilobits)
  • Operating voltage: 5V
  • Access time: 55 nanoseconds
  • Organization: 8 bits x 8192 words
  • Data retention: Minimum 10 years

Detailed Pin Configuration

  1. A0: Address input
  2. A1: Address input
  3. A2: Address input
  4. A3: Address input
  5. A4: Address input
  6. A5: Address input
  7. A6: Address input
  8. A7: Address input
  9. VCC: Power supply
  10. CE: Chip enable
  11. OE: Output enable
  12. WE: Write enable
  13. I/O0: Data input/output
  14. I/O1: Data input/output
  15. I/O2: Data input/output
  16. I/O3: Data input/output
  17. I/O4: Data input/output
  18. I/O5: Data input/output
  19. I/O6: Data input/output
  20. I/O7: Data input/output
  21. GND: Ground

Functional Features

  • Random access: Allows data to be read from or written to any memory location.
  • Low power consumption: Operates efficiently, minimizing energy usage.
  • High reliability: Provides stable and consistent performance over time.
  • Easy integration: Compatible with various electronic systems and microcontrollers.

Advantages and Disadvantages

Advantages

  • Fast access time enables quick retrieval of data.
  • Non-volatile nature ensures data retention even during power loss.
  • Compact size allows for space-efficient integration into electronic devices.
  • High reliability ensures long-term performance.

Disadvantages

  • Limited storage capacity compared to other memory devices.
  • Relatively higher cost per kilobit compared to larger memory chips.
  • Requires external circuitry for proper interfacing with the system.

Working Principles

CY6264-55SNXI operates based on the principles of semiconductor memory technology. It utilizes a combination of transistors and capacitors to store and retrieve digital information. When an address is provided, the corresponding memory cell is accessed, allowing data to be read or written.

Detailed Application Field Plans

CY6264-55SNXI finds applications in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Communication devices - Industrial automation - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to CY6264-55SNXI include: - AT28C64B by Atmel - M27C64A by STMicroelectronics - 62256 by Winbond Electronics

These alternatives provide comparable memory capacity, operating characteristics, and pin configurations, making them suitable replacements for CY6264-55SNXI in many applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací CY6264-55SNXI v technických řešeních

Sure! Here are 10 common questions and answers related to the application of CY6264-55SNXI in technical solutions:

  1. Question: What is CY6264-55SNXI?
    Answer: CY6264-55SNXI is a specific model of static random-access memory (SRAM) chip manufactured by Cypress Semiconductor.

  2. Question: What is the capacity of CY6264-55SNXI?
    Answer: CY6264-55SNXI has a capacity of 8 kilobits (8Kb) or 8192 bits.

  3. Question: What is the operating voltage range for CY6264-55SNXI?
    Answer: The operating voltage range for CY6264-55SNXI is typically between 4.5V and 5.5V.

  4. Question: What is the access time of CY6264-55SNXI?
    Answer: The access time of CY6264-55SNXI is 55 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Question: Can CY6264-55SNXI be used in battery-powered devices?
    Answer: Yes, CY6264-55SNXI can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Question: Is CY6264-55SNXI compatible with other SRAM chips?
    Answer: Yes, CY6264-55SNXI follows industry-standard pinout and interface specifications, making it compatible with other SRAM chips that adhere to the same standards.

  7. Question: What is the package type of CY6264-55SNXI?
    Answer: CY6264-55SNXI comes in a 28-pin plastic dual in-line package (PDIP).

  8. Question: Can CY6264-55SNXI be used in high-temperature environments?
    Answer: No, CY6264-55SNXI is not designed for high-temperature environments and has a recommended operating temperature range of -40°C to 85°C.

  9. Question: What are some typical applications of CY6264-55SNXI?
    Answer: CY6264-55SNXI is commonly used in various technical solutions such as embedded systems, industrial control systems, communication equipment, and consumer electronics.

  10. Question: Is CY6264-55SNXI a non-volatile memory?
    Answer: No, CY6264-55SNXI is a volatile memory, meaning it requires a continuous power supply to retain data.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.