CY6264-55SNXC

Product Overview

Category

CY6264-55SNXC belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

CY6264-55SNXC comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of CY6264-55SNXC lies in its ability to provide fast and reliable data storage in various electronic applications.

Packaging/Quantity

Each package of CY6264-55SNXC contains one SRAM chip.

Specifications

• Memory Size: 8 kilobits (64 kilobits)
• Operating Voltage: 5V
• Access Time: 55 nanoseconds
• Data Retention: More than 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A12)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Fast read and write operations
• Easy interfacing with microcontrollers and other digital devices
• Low standby current consumption
• Automatic power-down mode for further power savings

Advantages and Disadvantages

Advantages

• High-speed data access allows for efficient data processing.
• Non-volatile memory ensures data retention even during power loss.
• Low power consumption prolongs battery life in portable devices.
• Compact size enables integration into space-constrained designs.

Disadvantages

• Limited memory capacity compared to other storage technologies.
• Relatively higher cost per bit compared to alternative memory options.

Working Principles

CY6264-55SNXC operates by storing digital information in a matrix of memory cells. These cells consist of transistors and capacitors that retain their state even when power is removed. The chip utilizes address inputs to select specific memory locations for read or write operations. The data stored in the memory cells can be accessed and manipulated through the data input/output pins.

Detailed Application Field Plans

CY6264-55SNXC finds applications in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Communication equipment - Industrial automation systems - Medical devices

Detailed and Complete Alternative Models

1. CY62256NLL-70PXC: 32 kilobit (256 kilobit) SRAM chip with an access time of 70 nanoseconds.
2. IS62WV51216BLL-55TLI: 8 megabit (512 kilobit) SRAM chip with an access time of 55 nanoseconds.
3. AS6C4008-55SIN: 4 megabit (512 kilobit) SRAM chip with an access time of 55 nanoseconds.

These alternative models offer different memory capacities and access times to cater to diverse application requirements.

In conclusion, CY6264-55SNXC is a high-speed SRAM chip that provides reliable data storage in various electronic devices. Its compact size, low power consumption, and non-volatile memory make it suitable for a wide range of applications. While it has limitations in terms of memory capacity and cost, there are alternative models available to meet specific needs.