CY62136ESL-45ZSXIT

Product Overview

Category

CY62136ESL-45ZSXIT belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The CY62136ESL-45ZSXIT offers fast access times, enabling efficient data retrieval and processing.
• Low power consumption: It is designed to operate at low power levels, making it suitable for battery-powered devices.
• Compact package: The chip comes in a small form factor, allowing for space-efficient integration into electronic circuits.
• Reliable performance: The CY62136ESL-45ZSXIT ensures stable and consistent operation, minimizing data errors.

Package and Quantity

The CY62136ESL-45ZSXIT is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands per package.

Specifications

• Operating voltage: 2.7V - 3.6V
• Access time: 45 ns
• Density: 4 Mb (512K x 8)
• Interface: Parallel
• Operating temperature range: -40°C to +85°C
• Standby current: <1 µA (typical)

Detailed Pin Configuration

The CY62136ESL-45ZSXIT has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

```

Pin Name Function

1 VCC Power supply 2 A0-A18 Address inputs 3 CE Chip enable 4 OE Output enable 5 WE Write enable 6 I/O0 Data input/output 0 7 I/O1 Data input/output 1 8 I/O2 Data input/output 2 9 I/O3 Data input/output 3 10 I/O4 Data input/output 4 11 I/O5 Data input/output 5 12 I/O6 Data input/output 6 13 I/O7 Data input/output 7 14 GND Ground 15-32 NC No connection ```

Functional Features

The CY62136ESL-45ZSXIT offers several functional features that enhance its usability and performance:

1. Random access: It allows for direct access to any memory location, enabling efficient data retrieval.
2. Low power standby mode: The chip can enter a low-power standby mode when not in use, conserving energy.
3. Write protection: It provides write protection mechanisms to prevent accidental modification of stored data.
4. High-speed operation: The SRAM chip operates at a fast speed, facilitating quick data processing.

Advantages and Disadvantages

Advantages

• High-speed operation enables rapid data access and processing.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for space-efficient integration into electronic circuits.
• Reliable performance ensures stable operation with minimal data errors.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Volatile memory, requiring constant power supply to retain data.
• Relatively higher cost per unit compared to some alternative memory solutions.

Working Principles

The CY62136ESL-45ZSXIT utilizes static random access memory technology. It stores data in a flip-flop circuit configuration, which retains information as long as power is supplied. When an address is provided, the chip accesses the corresponding memory location and retrieves or stores data based on the control signals received.

Detailed Application Field Plans

The CY62136ESL-45ZSXIT finds applications in various electronic devices and systems, including but not limited to:

1. Mobile devices: Used as cache memory in smartphones and tablets for faster data access.
2. Networking equipment: Employed in routers and switches to store routing tables and temporary data.
3. Industrial automation: Utilized in control systems and data loggers for quick data processing.
4. Automotive electronics: Integrated into vehicle control units for efficient data storage and retrieval.
5. Medical devices: Used in medical equipment for storing patient data and real-time monitoring.

Detailed and Complete Alternative Models

1. CY62128ELL-45ZXI: 128K x 8 SRAM chip with similar characteristics and package.
2. IS62WV51216BLL-55TLI: 512K x 16 SRAM chip with extended temperature range.
3. AS6C4008-55SIN: 4 Mb (512K x 8) SRAM chip with lower power consumption.

These alternative models offer comparable functionality and can be