CY62128BNLL-70SXET

Product Overview

Category

CY62128BNLL-70SXET belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The CY62128BNLL-70SXET offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM chip is designed to operate efficiently with minimal power consumption, extending battery life in portable devices.
• Reliable performance: With its stable and reliable operation, this product ensures data integrity and system stability.
• Wide temperature range: The CY62128BNLL-70SXET can function reliably across a wide temperature range, making it suitable for use in different environments.

Package and Quantity

The CY62128BNLL-70SXET is available in a small outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity of chips, such as 2500 units per reel.

Specifications

• Memory size: 128 kilobits (16 kilobytes)
• Organization: 16,384 words × 8 bits
• Operating voltage: 2.7V - 3.6V
• Access time: 70 nanoseconds
• Standby current: 1 microampere (typical)
• Operating temperature range: -40°C to +85°C

Pin Configuration

The CY62128BNLL-70SXET has a total of 28 pins, which are assigned specific functions. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A13)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Chip Enable (CE): Activates the chip for read/write operations.
• Output Enable (OE): Enables the output buffers, allowing data to be read from the memory.
• Write Enable (WE): Enables write operations to the memory.
• Address Inputs (A0-A13): Selects the specific memory location to read from or write to.
• Data Inputs/Outputs (DQ0-DQ7): Transfers data between the memory and external devices.
• Power Supply (VCC): Provides the required power for the chip.
• Ground (GND): Serves as the reference voltage.

Advantages and Disadvantages

Advantages

• High-speed access allows for quick data retrieval.
• Low power consumption extends battery life in portable devices.
• Reliable performance ensures data integrity.
• Wide temperature range enables usage in various environments.

Disadvantages

• Limited memory size compared to other storage solutions.
• Higher cost per bit compared to larger capacity memory chips.

Working Principles

The CY62128BNLL-70SXET operates based on static random access memory technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses a combination of transistors and capacitors to store and retrieve data quickly.

Application Field Plans

The CY62128BNLL-70SXET finds applications in various electronic systems, including but not limited to: - Embedded systems - Communication devices - Industrial control systems - Automotive electronics - Medical equipment

Alternative Models

Several alternative models with similar specifications and functionality are available in the market. Some notable alternatives to the CY62128BNLL-70SXET include: - CY62128ELL-45SXI - IS62WV12816BLL-55TLI - AS6C62256-55PCN

These alternative models offer comparable performance and can be considered as substitutes for the CY62128BNLL-70SXET.

In conclusion, the CY62128BNLL-70SXET is a high-speed, low-power SRAM chip that offers reliable performance. With its wide temperature range and small form factor, it finds applications in various electronic systems. While it has limitations in terms of memory size and cost per bit, it remains a popular choice for memory solutions in many industries.