CY62128BLL-70ZRXET

Product Overview

Category

The CY62128BLL-70ZRXET belongs to the category of static random access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The CY62128BLL-70ZRXET offers fast access times, making it suitable for applications requiring quick data retrieval.
• Low power consumption: This SRAM chip is designed to operate efficiently with minimal power requirements.
• Reliable performance: It provides reliable data storage and retrieval capabilities, ensuring the integrity of stored information.
• Compact package: The CY62128BLL-70ZRXET is available in a compact package, allowing for easy integration into different electronic designs.

Package and Quantity

The CY62128BLL-70ZRXET is packaged in a small outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity, such as 250 or 1000 units per reel.

Specifications

• Memory size: 128 kilobits (16 kilobytes)
• Operating voltage: 2.7V - 3.6V
• Access time: 70 nanoseconds
• Standby current: 1 microampere (typical)
• Operating temperature range: -40°C to +85°C

Pin Configuration

The CY62128BLL-70ZRXET has a total of 28 pins, which are assigned specific functions. The pin configuration is as follows:

```

Pin Name Function

1 A12 Address Input 2 A7 Address Input 3 A6 Address Input 4 A5 Address Input 5 A4 Address Input 6 A3 Address Input 7 A2 Address Input 8 A1 Address Input 9 A0 Address Input 10 /CE Chip Enable Input 11 /OE Output Enable Input 12 I/O0 Data Input/Output 13 I/O1 Data Input/Output 14 I/O2 Data Input/Output 15 I/O3 Data Input/Output 16 VCC Power Supply 17 GND Ground 18 I/O4 Data Input/Output 19 I/O5 Data Input/Output 20 I/O6 Data Input/Output 21 I/O7 Data Input/Output 22 A8 Address Input 23 A9 Address Input 24 A11 Address Input 25 A10 Address Input 26 /WE Write Enable Input 27 /CS2 Chip Select 2 Input 28 /CS1 Chip Select 1 Input ```

Functional Features

The CY62128BLL-70ZRXET offers the following functional features:

• Random access: It allows for direct access to any memory location, enabling efficient data retrieval.
• Byte-wide operation: The chip supports byte-wide operations, facilitating easy interfacing with microcontrollers and other devices.
• Low power standby mode: It features a low-power standby mode, reducing power consumption when not actively accessed.
• High-speed operation: With a fast access time of 70 nanoseconds, it enables quick data read and write operations.

Advantages and Disadvantages

Advantages

• High-speed performance ensures rapid data access.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for space-efficient integration.
• Reliable data storage and retrieval capabilities.

Disadvantages

• Limited memory size (128 kilobits) may not be sufficient for certain applications requiring larger storage capacity.
• Higher cost compared to other memory technologies like dynamic random access memory (DRAM).

Working Principles

The CY62128BLL-70ZRXET operates based on the principles of static random access memory. It stores data in a flip-flop circuit, which retains information as long as power is supplied. The chip uses address inputs to select specific memory locations and allows for read and write operations through control signals.

Detailed Application Field Plans

The CY62128BLL-70ZRXET can be used in various electronic applications, including but not limited to: - Microcontrollers - Embedded systems - Communication devices - Industrial automation - Medical equipment - Automotive electronics

Alternative Models

In addition to the CY62128BLL-70ZRXET, there are several alternative SRAM chips available in the market with similar specifications and functionalities. Some notable alternatives include: - CY62128ELL-45ZXI - IS62WV12816BLL-55TLI - AS6C1008-55S