CY62128BLL-70ZRXE

Product Overview

Category

The CY62128BLL-70ZRXE belongs to the category of static random access memory (SRAM) chips.

Use

This product is commonly used in electronic devices and systems that require high-speed read and write operations, such as computers, smartphones, and networking equipment.

Characteristics

• High-speed operation: The CY62128BLL-70ZRXE offers fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Non-volatile storage: The data stored in the CY62128BLL-70ZRXE remains intact even when power is disconnected, ensuring data integrity.

Package

The CY62128BLL-70ZRXE is available in a compact and industry-standard 32-pin plastic small outline integrated circuit (SOIC) package.

Essence

The essence of the CY62128BLL-70ZRXE lies in its ability to provide reliable and high-performance memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of CY62128BLL-70ZRXE chips. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Operating voltage: 2.7V - 3.6V
• Access time: 70 nanoseconds
• Memory capacity: 128 kilobits (16 kilobytes)
• Organization: 16,384 words x 8 bits
• Standby current: 10 microamps (typical)
• Operating temperature range: -40°C to +85°C

Detailed Pin Configuration

The CY62128BLL-70ZRXE has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0 - A13)
5. Data Inputs/Outputs (DQ0 - DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Random access: The CY62128BLL-70ZRXE allows for direct and random access to any memory location, enabling efficient data retrieval.
• High-speed operation: With an access time of 70 nanoseconds, this SRAM chip ensures fast read and write operations.
• Low power consumption: The low standby current and power-saving features make the CY62128BLL-70ZRXE suitable for energy-efficient applications.
• Non-volatile storage: The non-volatile nature of this SRAM chip ensures that data remains intact even during power interruptions.

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data integrity.
• Compact package size allows for easy integration into various electronic systems.

Disadvantages

• Limited memory capacity compared to other types of memory chips.
• Relatively higher cost per kilobit compared to larger memory chips.

Working Principles

The CY62128BLL-70ZRXE operates based on the principles of static random access memory. It utilizes flip-flops to store and retrieve data. When powered on, the chip maintains the stored data until it is overwritten or power is disconnected. The memory cells are organized in a matrix, with each cell storing one bit of information.

Detailed Application Field Plans

The CY62128BLL-70ZRXE finds application in a wide range of electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Mobile phones and smartphones - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

• CY62128BLL-70ZRI: Similar to the CY62128BLL-70ZRXE, but with an extended operating temperature range (-40°C to +125°C).
• CY62128BLL-70ZSXE: Offers a faster access time of 55 nanoseconds.
• CY62128BLL-70ZSNXE: Provides a lower standby current of 5 microamps.

These alternative models offer variations in operating conditions, performance parameters, and power consumption to cater to different application requirements.

Word count: 550 words