CY14B104L-BA20XIT

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics:
  • Low power consumption
  • High reliability
  • Small package size
• Package: BA20XIT
• Essence: Non-volatile memory storage solution
• Packaging/Quantity: Individual units packaged in trays or reels

Specifications

• Memory Type: Serial NOR Flash
• Memory Size: 1 Mbit (128 Kbytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Programming Time: Typically 0.5ms per byte
• Erase Time: Typically 50ms for a full chip erase

Detailed Pin Configuration

The CY14B104L-BA20XIT has a total of 8 pins, which are as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground reference | | 3 | HOLD# | Hold input for suspending operations | | 4 | WP# | Write Protect input for protecting the memory | | 5 | SCK | Serial Clock input for SPI communication | | 6 | SI | Serial Input for data input during SPI communication | | 7 | SO | Serial Output for data output during SPI communication | | 8 | CS# | Chip Select input for selecting the device |

Functional Features

• Non-volatile memory allows data retention even when power is removed
• Serial Peripheral Interface enables easy integration with microcontrollers and other devices
• Low power consumption makes it suitable for battery-powered applications
• High reliability ensures data integrity over extended periods of time
• Small package size saves board space in compact designs

Advantages and Disadvantages

Advantages

• Fast programming and erase times
• Wide operating voltage range
• High endurance for frequent write/erase cycles
• Compact package size for space-constrained applications

Disadvantages

• Limited storage capacity compared to other memory types
• Relatively higher cost per bit compared to larger memory devices

Working Principles

The CY14B104L-BA20XIT is based on the Serial NOR Flash technology. It utilizes a floating-gate transistor structure to store data. When data is written, electrons are trapped in the floating gate, altering the transistor's threshold voltage. This change in threshold voltage represents the stored data. The data can be read by applying appropriate voltages to the memory cells and sensing the resulting current flow.

Detailed Application Field Plans

The CY14B104L-BA20XIT is commonly used in various electronic devices and systems, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive electronics (e.g., infotainment systems, instrument clusters) - Industrial control systems - Medical devices - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

• CY14B101L-BA25XI: 1 Mbit Serial NOR Flash in BA25XI package
• CY14B102L-BA15XI: 2 Mbit Serial NOR Flash in BA15XI package
• CY14B103L-BA10XI: 4 Mbit Serial NOR Flash in BA10XI package
• CY14B105L-BA05XI: 512 Kbit Serial NOR Flash in BA05XI package

These alternative models offer different memory sizes and package options to suit specific application requirements.

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