CY14B104L-BA20XC

Overview

Product Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - Non-volatile memory - Low power consumption - High reliability - Small form factor

Package: BA20XC

Essence: CY14B104L is a non-volatile memory IC designed for various applications that require data storage even when power is removed.

Packaging/Quantity: The CY14B104L-BA20XC is packaged in a BA20XC package, which contains a single IC.

Specifications

• Memory Capacity: 1 Megabit (128K x 8 bits)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Endurance: Up to 1 million write cycles

Pin Configuration

The CY14B104L-BA20XC has a total of 20 pins. The pin configuration is as follows:

Pin 1: VCC Pin 2: A0 Pin 3: A1 Pin 4: A2 Pin 5: A3 Pin 6: A4 Pin 7: A5 Pin 8: A6 Pin 9: A7 Pin 10: GND Pin 11: CE# Pin 12: OE# Pin 13: WE# Pin 14: NC Pin 15: I/O0 Pin 16: I/O1 Pin 17: I/O2 Pin 18: I/O3 Pin 19: I/O4 Pin 20: I/O5

Functional Features

• Non-volatile memory: The CY14B104L retains data even when power is removed, making it suitable for applications requiring persistent storage.
• Low power consumption: The IC operates at low power levels, conserving energy and extending battery life in portable devices.
• High reliability: With a data retention period of up to 100 years and endurance of up to 1 million write cycles, the CY14B104L ensures reliable data storage.
• Small form factor: The compact BA20XC package allows for space-efficient integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data persistence - Low power consumption extends battery life - High reliability with long data retention and endurance - Compact form factor for easy integration

Disadvantages: - Limited memory capacity compared to higher-capacity alternatives - Slower read/write speeds compared to some other memory technologies

Working Principles

The CY14B104L-BA20XC utilizes a floating gate technology to store data. When data is written, charges are trapped in the floating gate, altering the threshold voltage of the memory cell. This change in threshold voltage determines the stored data. During read operations, the threshold voltage is measured to retrieve the stored information.

Detailed Application Field Plans

The CY14B104L-BA20XC can be used in various applications, including but not limited to: - Embedded systems - Industrial automation - Consumer electronics - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to the CY14B104L-BA20XC include: - CY14B101L-BA25XC: 1 Megabit memory with a different pin configuration and package - CY14B256LA-SZ45XI: 256 Kilobit memory with a different pin configuration and package - CY14B512LA-GS45XI: 512 Kilobit memory with a different pin configuration and package - CY14B204LA-GS45XI: 2 Megabit memory with a different pin configuration and package

These alternative models offer different memory capacities and pin configurations to suit specific application requirements.

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