Central Semiconductor Corp
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CMPD3003S TR
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CMPD3003S TR

Product Overview

Category: Semiconductor
Use: Amplifier
Characteristics: High gain, low noise
Package: SOT-23
Essence: Silicon NPN Transistor
Packaging/Quantity: Tape & Reel, 3000 units

Specifications

  • Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 100mA
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
  • Transition Frequency: 250MHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1kHz

Detailed Pin Configuration

  1. Base
  2. Emitter
  3. Collector

Functional Features

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Complementary PNP type available (CMPD3004S TR)

Advantages and Disadvantages

Advantages: - High gain - Low noise - Small package size

Disadvantages: - Limited power handling capacity - Sensitive to temperature variations

Working Principles

The CMPD3003S TR operates as a high-gain amplifier by controlling the flow of current between its collector and emitter terminals. When a small current flows into the base terminal, it allows a larger current to flow from the collector to the emitter, amplifying the input signal.

Detailed Application Field Plans

The CMPD3003S TR is suitable for use in: - RF amplifiers - Low noise amplifiers - Signal processing circuits

Detailed and Complete Alternative Models

  • CMPD3002S TR
  • CMPD3004S TR
  • CMPD3005S TR

This completes the English editing encyclopedia entry structure format for CMPD3003S TR.

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací CMPD3003S TR v technických řešeních

Sure, here are 10 common questions and answers related to the application of CMPD3003S TR in technical solutions:

  1. Question: What is CMPD3003S TR?
    Answer: CMPD3003S TR is a high-speed, low-power NPN bipolar junction transistor (BJT) designed for use in various technical solutions.

  2. Question: What are the key features of CMPD3003S TR?
    Answer: The key features of CMPD3003S TR include high transition frequency, low noise figure, and low power consumption.

  3. Question: In what technical solutions can CMPD3003S TR be used?
    Answer: CMPD3003S TR can be used in RF amplifiers, oscillators, mixers, and other high-frequency applications.

  4. Question: What is the typical operating voltage range for CMPD3003S TR?
    Answer: The typical operating voltage range for CMPD3003S TR is between 3V and 5V.

  5. Question: What is the maximum frequency at which CMPD3003S TR can operate?
    Answer: CMPD3003S TR can operate at frequencies up to several gigahertz.

  6. Question: What is the recommended biasing configuration for CMPD3003S TR?
    Answer: The recommended biasing configuration for CMPD3003S TR is common-emitter mode with appropriate DC biasing.

  7. Question: How does CMPD3003S TR compare to other transistors in its class?
    Answer: CMPD3003S TR offers lower noise figure and higher transition frequency compared to many other transistors in its class.

  8. Question: Can CMPD3003S TR be used in low-power applications?
    Answer: Yes, CMPD3003S TR's low power consumption makes it suitable for use in low-power applications.

  9. Question: Are there any specific layout considerations for using CMPD3003S TR in a technical solution?
    Answer: Yes, proper RF layout techniques should be followed to minimize parasitic effects and ensure optimal performance.

  10. Question: Where can I find detailed application notes for using CMPD3003S TR in technical solutions?
    Answer: Detailed application notes for CMPD3003S TR can be found on the manufacturer's website or in the product datasheet.