BD239E-S

Product Overview

Category: Semiconductor
Use: Power transistor for high-voltage applications
Characteristics: High voltage, high current capability, low saturation voltage
Package: TO-220AB
Essence: Power amplification and switching
Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

Voltage Rating: 100V
Current Rating: 2A
Power Dissipation: 25W
Gain (hFE): 25-250
Frequency: 3MHz
Operating Temperature: -65°C to 150°C

Detailed Pin Configuration

Base (B)
Collector (C)
Emitter (E)

Functional Features

High voltage capability
Low collector-emitter saturation voltage
Fast switching speed
Good linearity in power amplification applications

Advantages

Suitable for high-voltage applications
Low saturation voltage reduces power dissipation
Wide operating temperature range

Disadvantages

Limited current rating compared to some alternatives
Relatively low gain compared to some alternatives

Working Principles

The BD239E-S is a bipolar junction transistor (BJT) designed for power amplification and switching applications. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing the device to amplify or switch electrical signals.

Detailed Application Field Plans

The BD239E-S is commonly used in audio amplifiers, power supplies, motor control circuits, and other high-voltage applications where moderate current and voltage ratings are required. Its low saturation voltage makes it suitable for efficient power switching.

Detailed and Complete Alternative Models

BD237
BD238
BD240
BD241

Note: The above list is not exhaustive and there are many other alternative models available from various manufacturers.

This information provides a comprehensive overview of the BD239E-S power transistor, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.