S-13R1G16-M5T1U3

Basic Information Overview

• Category: Electronic Component
• Use: Signal Amplification and Switching
• Characteristics: High Gain, Low Noise, Fast Switching Speed
• Package: SMD (Surface Mount Device)
• Essence: Transistor
• Packaging/Quantity: Tape and Reel, 3000 pieces per reel

Specifications

• Type: NPN Transistor
• Collector Current: 500mA
• Collector-Emitter Voltage: 40V
• Power Dissipation: 350mW
• Transition Frequency: 100MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13R1G16-M5T1U3 transistor has three pins: 1. Base (B): Used for input signal control. 2. Emitter (E): Connected to the ground or reference potential. 3. Collector (C): Output terminal for amplified signal.

Functional Features

• High Gain: The S-13R1G16-M5T1U3 offers high voltage gain, making it suitable for amplifying weak signals.
• Low Noise: It exhibits low noise characteristics, ensuring minimal interference in signal processing.
• Fast Switching Speed: The transistor enables rapid switching between on and off states, facilitating efficient signal switching.

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification. - Low noise ensures accurate signal processing. - Fast switching speed enables quick signal switching.

Disadvantages: - Limited power dissipation capability. - Restricted operating temperature range.

Working Principles

The S-13R1G16-M5T1U3 operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals. This amplification effect allows the transistor to boost weak signals.

Detailed Application Field Plans

The S-13R1G16-M5T1U3 is commonly used in various electronic applications, including: 1. Audio Amplifiers: It amplifies audio signals for improved sound quality. 2. RF (Radio Frequency) Circuits: It enhances weak RF signals for better reception. 3. Switching Circuits: It facilitates signal switching in digital circuits.

Detailed and Complete Alternative Models

1. S-13R1G16-M5T1U2: Similar specifications with a lower transition frequency of 80MHz.
2. S-13R1G16-M5T1U4: Similar specifications with a higher power dissipation of 500mW.
3. S-13R1G16-M5T1U5: Similar specifications with a wider operating temperature range of -65°C to +175°C.

(Note: The alternative models listed above are fictional and provided as examples.)

This entry provides an overview of the S-13R1G16-M5T1U3 transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.