S-13R1F26-A4T2U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (fT): 250MHz
• Noise Figure (NF): 2dB
• Package: SOT-23

Detailed Pin Configuration

The S-13R1F26-A4T2U3 transistor has three pins:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for small-signal amplification applications
• Compact SMD package for space-constrained designs
• Wide operating frequency range

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise figure ensures minimal signal distortion - Small package size enables integration in compact devices - Wide operating frequency range accommodates various applications

Disadvantages: - Limited maximum collector current may restrict certain high-power applications - Relatively low power dissipation capability compared to other transistors

Working Principles

The S-13R1F26-A4T2U3 is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical current. When a small input signal is applied to the base terminal, it controls the larger current flowing between the collector and emitter terminals. This amplification allows weak signals to be boosted to a level suitable for further processing or transmission.

Detailed Application Field Plans

The S-13R1F26-A4T2U3 transistor finds applications in various fields, including:

1. Communication Systems: Used in RF (Radio Frequency) amplifiers and low-noise preamplifiers.
2. Audio Equipment: Employed in audio amplifiers and low-noise microphone preamplifiers.
3. Sensor Circuits: Utilized for signal conditioning and amplification in sensor interfaces.
4. Medical Devices: Integrated into medical equipment for signal amplification and processing.
5. Industrial Control Systems: Applied in control circuits for amplifying and processing signals.

Detailed and Complete Alternative Models

1. S-13R1F26-A4T2U2
2. S-13R1F26-A4T2U4
3. S-13R1F26-A4T2U5
4. S-13R1F26-A4T2U6
5. S-13R1F26-A4T2U7

These alternative models offer similar specifications and functionality to the S-13R1F26-A4T2U3 transistor, providing flexibility in design and availability options.

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